| PART |
Description |
Maker |
| CMBT847E |
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE.
|
Continental Device India Limited
|
| D5017UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W - 50V - 175MHz SINGLE ENDED
|
Seme LAB
|
| HK15A-12 HK15A-15 HK150A-12 HK50A-15 HK50A-5 HK100 |
Single output 10W~150W
CAP POLYPROPYLENE .0091UF 50V 1%
50W 4500 OHMS VIT ADJ 10% RoHS Compliant: Yes
|
LAMBDA[DENSEI-LAMBDA]
|
| IPL60R1K5C6S |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STH170N8F7-2 |
High avalanche ruggedness
|
STMicroelectronics
|
| IPA50R500CE IPA50R500CE-15 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STL8N6LF6AG |
High avalanche ruggedness
|
STMicroelectronics
|
| STL66N3LLH5 |
High avalanche ruggedness
|
STMicroelectronics
|
| IPL65R650C6S |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| IPW60R070P6 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STF140N8F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| IPA60R400CE IPD60R400CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
